Samsung has invented a new eUFS storage memory chip that is three times faster than the previous generation and appears to be well on its way to being incorporated into next-generation phones like the iPhone 13 and Samsung Galaxy S30.

The company's eUFS 3.1 storage, revealed in a Samsung blog post, is already in the production phase and will soon be seen in new devices. In fact, the Galaxy S20 Plus and Ultra already use this chip.

Samsung has been knocking it out of the park with new storage for phones in the race to expand available space.

Early last year, Samsung announced a 1TB chip capable of storing 260 10-minute 4K UHD videos. However, it was not included in the Galaxy S20 Plus, and the internal storage was limited to 512GB so that the speed of this chip could be used for 8K video recording.

According to Samsung Electronics, this speed is so fast that it can record 8K video without buffering memory, thus lowering the price of the phone. Such chips are also ideal for other high-bandwidth recording tasks, such as capturing high-resolution video with 3D depth maps or dual-lens stereoscopic video.

Samsung claims that the chip offers faster performance than PC solid-state drives and microSD cards: "With sequential write speeds exceeding 1,200MB/s, the Samsung 512GB eUFS 3.1 is twice as fast as a SATA-based PC ( 540MB/sec) and more than twice as fast as a UHS-I microSD card (90MB/sec). [It takes only about 1.5 minutes to move 100GB of data on a phone with the new eUFS 3.1 chip, compared to over 4 minutes on a UFS 3.0-based phone. This is very impressive and could save several hours per year if you do a lot of 4K high-resolution video recording. The chip is even faster when reading memory sequentially, reaching 2,100 MB per second.

The electronics giant is already mass-producing the 128GB, 256GB, and 512GB chips at its Pyeongtaek plant in South Korea and in Xi'an, China.

This means that companies such as Apple and Xiaomi could add these storage chips to their new flagship models as early as this year.